论文成果
- Modified dislocation filter method: toward growth of GaAs on Si by metal organic chemical vapor deposition .Applied Physics A .2016 ,122 (588) 2024-05-07
- Extremely Low-Threshold Current Density InGaAs/AlGaAs Quantum-Well Lasers on Silicon .Journal of Lightwave Technology .2015 ,33 (15) :3163-3169 2024-05-06
- Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth .APPLIED PHYSICS LETTERS .2015 ,106 (20) (202105) 2024-05-07
- Epitaxial lateral overgrowth of GaAs on (001) Si nano-trenches .2015 European Conference on Lasers and Electro-Optics - European Quantum Electronics Conference (CE_P_18) 2024-05-07
- Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition .Chinese Physics Letters .2015 ,32 (08) (088101) 2024-05-07
- Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition .Chinese Physics B .2014 ,24 (2) (028101) 2024-05-07
- Selective area growth of GaAs on silicon .Asia Communications and Photonics Conference 2014 (ATh2A.1) 2024-05-07
- Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition .Chinese Physics Letters .2013 ,30 (11) (116801) 2024-05-07
- Effect of different buffer layers and superlattice intermediate layers on GaAs/Si(001) .Asia Communications and Photonics Conference 2013 (AF4A.2) 2024-05-07
- The Effect of InGaAs/GaAs Superlattices on GaAs Epilayer Grown on Si (100) Substrate .Asia Communications and Photonics Conference 2013 (AF2B.17) 2024-05-07