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A Novel Interface Trap 1T0C In-Ga-Zn Oxide DRAM Cell with Enhanced Data Retention

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Title of Paper:A Novel Interface Trap 1T0C In-Ga-Zn Oxide DRAM Cell with Enhanced Data Retention

Journal:2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

Place of Publication:Nanjing

Indexed by:Article

Discipline:交叉学科

First-Level Discipline:一级学科

Translation or Not:no

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