刘昊，讲师，硕士生导师，主要从事硅基光电集成领域的研究工作，近年来致力于硅基量子点与量子阱器件的外延与制备工作，在SCI刊物上发表多篇论文。主持包括自然基金在内的多项科研项目，参与国家重点研发项目与北京市科技计划课题等。

近年的通讯作者论文：

[1] Ye J, Liu H, Jiang C, et al. Antiphase-Boundary-Free GaAs Grown via MBE on an On-Axis Si (001) Substrate with High-Temperature Surface Step Pretreatment[J]. Crystal Growth & Design, 2025.

[2] Liu H, Jiang C, Liu S, et al. Reducing dislocations for room-temperature continuous-wave InGaAs/AlGaAs multiple quantum well lasers monolithically grown on Si[J]. Optics Communications, 2025, 574: 131214.

[3] Jiang C, Liu H, Liu Z, et al. Molecular beam epitaxy of high-quality GaAs on Si (001) by multi-time thermal cycle annealing[J]. Applied Physics A, 2024, 130(1): 5.

[4] Liu S, Liu H, Lin J, et al. Monolithic Integration of 1.3μm Quantum Dot Microdisk Lasers and Photo Detectors Grown on Planar On-Axis Si (001) Substrates[C]. 2024 Asia Communications and Photonics Conference (ACP) . IEEE, 2024: 1-3.

[5] Li J, Jiang C, Liu H, et al. Silicon‐Based 850 nm GaAs/GaAsP‐Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers[J]. Advanced Photonics Research, 2024, 5(7): 2300348.

[6] Lin J, Liu H, Jiang C, et al. Formation of nano-cone structures on silicon via maskless reactive ion etching[C]. AOPC 2023: Nanophotonics. SPIE, 2023, 12961: 63-72.

[7] Liu Z, Liu H, Jiang C, et al. Improved performance of InGaAs/AlGaAs quantum well lasers on silicon using InAlAs trapping layers[J]. Optics Express, 2023, 31(5): 7900-7906.

[8] Jiang C, Liu H, Li J, et al. Rapid and facile characterization of dislocations in cross-sectional GaAs/Si films using electron channeling contrast imaging[C]. AOPC 2022: Optoelectronics and Nanophotonics. SPIE, 2023, 12556: 266-273.

近年承担的科研项目：

[1] 自然基金青年项目，2023-2025；

[2] 某省部级纵向项目，2023-2025；

[3] 某横向委托项目，2024-2025；

[4] 国家重点实验室课题，2022-2024；

[5] 基本科研业务费项目,2022-2023;

[6] 国家重点研发计划课题，2019-2023（参与）；

[7] 北京市科技计划课题，2019-2023（参与）。