Affiliation of Author(s):北京邮电大学
Teaching and Research Group:科研楼334
Journal:Asia Communications and Photonics Conference 2014
Abstract:The epitaxial growth of GaAs on patterned Si(001) substrates by MOCVD is presented.Effect of growth temperature and V/III ratio on coalescence is investigated. Meanwhile, changing total pressure can reduce the polycrystals generated on mask.
Indexed by:Essay collection
Discipline:Engineering
First-Level Discipline:Electronic Science and technology *
Document Type:C
Translation or Not:no
Included Journals:EI
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Professor
Supervisor of Doctorate Candidates
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Gender:Male
Alma Mater:中国科学院半导体研究所
Education Level:研究生毕业
Degree:博士学位
Status:在职
School/Department:电子工程学院
Discipline:信息与通信工程* Information and communication engineering. Electronic Science and technology *
Business Address:科研楼334
Contact Information:010-61198040-604
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Honors and Titles:
2012年北京市科学技术三等奖 2013
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