颜鑫
硕士生导师
副教授
性别：男
学位：博士学位
学科：电子信息. 电子科学与技术*
在职信息：在职
所在单位：电子工程学院
学历：研究生毕业
所属院系：电子工程学院
办公地点：北京邮电大学新科研楼338
电子邮箱：
曾获荣誉：
2022当选：Nanoscale 2023年度新锐科学家
2017当选：中国电子学会自然科学三等奖
2016当选：中国电子学会优秀博士学位论文提名
2014当选：北京邮电大学优秀博士学位论文
其他联系方式
通讯/办公地址：
邮箱：
论文成果
- Xin Yan, Shuyu Fan, Xia Zhang, and Xiaomin Ren. Analysis of critical dimensions for nanowire core-multishell heterostructures. Nanoscale Research Letters 10: 389 (2015)
- Xin Yan, Xia Zhang, Junshuai Li, Yao Wu, and Xiaomin Ren. Self-catalyzed growth of pure zinc blende <110> InP nanowires. Applied Physics Letters 107, 023101 (2015).
- Xin Yan, Xia Zhang, Junshuai Li, Yao Wu, Jiangong Cui, and Xiaomin Ren. Fabrication and optical properties of GaAs/InGaAs/GaAs nanowire core-multishell quantum well heterostructures. Nanoscale 7, 1110-1115 (2015)
- Xin Yan, Xia Zhang, Junshuai Li, Jiangong Cui, and Xiaomin Ren. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires. Journal of Applied Physics 116, 214304 (2014)
- Jiangong Cui, Xia Zhang, Xin Yan, Junshuai Li, Yongqing Huang, and Xiaomin Ren. Selective-area growth of GaAs and GaAs/InxGa1-xAs/GaAs nanowires by MOCVD. Acta Physica Sinica 63, 136103 (2014)
- Jiangong Cui, , Xia Zhang, Xin Yan, Junshuai Li, Yongqing Huang, Xiaomen Ren. Preadsorption of gallium on GaAs(1 1 1)B surface during the self-catalyst growth of GaAs nanowires. Physica B 452, 31-36 (2014)
- Jiangong Cui, Xia Zhang, Xin Yan, Junshuai Li, Yongqing Huang, Xiaomen Ren. Electronic Structure Modulation of GaAs Nanowires by Surface Modification. Acta Physico-Chimica Sinica 30, 1841-1846 (2014)
- Junshuai Li, Xia Zhang, Xin Yan, Xiong Chen, Liang Li, Jiangong Cui, Yongqing Huang, and Xiaomin Ren. Fabrication and Electrical Properties of Axial and Radial GaAs Nanowire pn Junction Diode Arrays. Chinese Physics B 23, 128503 (2014)
- 王思佳，张辰，颜鑫，张霞，任晓敏。锥状GaAs纳米线阵列太阳能电池的光伏特性研究。光学学报 34，s222004（2014）
- Xin Yan, Xia Zhang, Junshuai Li, Jiangong Cui, Qi Wang, Yongqing Huang and Xiaomin Ren. Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion. Journal of Crystal Growth 384, 82-87 (2013)
