代表论文：

2024年

Quhe, R., Di, Z., Zhang, J., Sun, Y., Zhang, L., Guo, Y., Wang, S., & Zhou, P. (2023). Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics. Nature Nanotechnology. https://doi.org/10.1038/s41565-023-01539-4

Li, H., Li, Q., Li, Y., Yang, Z., Quhe, R., Sun, X., Wang, Y., Xu, L., Peng, L., Tian, H., Qiu, C., & Lu, J. (2024). Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit. Advanced Functional Materials. https://doi.org/10.1002/adfm.202402474

Zhang, J., Zhang, L., Sun, Y., Li, W., & Quhe, R. (2024). Named entity recognition in the perovskite field based on convolutional neural networks and MatBERT. Computational Materials Science, 240, 113014. https://doi.org/10.1016/j.commatsci.2024.113014

Xu, L., Xu, L., Lan, J., Li, Y., Li, Q., Wang, A., Guo, Y., Ang, Y. S., Quhe, R., & Lu, J. (2024). Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications. ACS Applied Materials& Interfaces. https://doi.org/10.1021/acsami.4c01353

Li, Q., Zheng, T., Xu, L., Fang, S., Yang, Z., Xu, L., Li, Y., Wu, B., Yang, X., Quhe, R., Ying, G., & Lu, J. (2024). N- and P-type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors. Physical Review Materials, 8(1), 014603. https://doi.org/10.1103/PhysRevMaterials.8.014603

2023年

Ke, Y., Li, W., Yin, G., Zhang, L., & Quhe, R. (2023). Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor. Physical Review Applied, 20(1), 014050. https://doi.org/10.1103/PhysRevApplied.20.014050

Quhe, R., Li, Q., Yang, X., & Lu, J. (2023). 2D fin field-effect transistors. Science Bulletin, 68(12), 1213–1215. https://doi.org/10.1016/j.scib.2023.05.019

Ma, J., Quhe, R., Zhang, W., Yan, Y., Tang, H., Qu, Z., Cheng, Y., Schmidt, O. G., & Zhu, M. (2023). Zn Microbatteries Explore Ways for Integrations in Intelligent Systems. Small, 19(26). https://doi.org/10.1002/smll.202300230

Li, Q., Yang, C., Xu, L., Liu, S., Fang, S., Xu, L., Yang, J., Ma, J., Li, Y., Wu, B., Quhe, R., Tang, K., & Lu, J. (2023). Symmetric and Excellent Scaling Behavior in Ultrathin n ‐ and p ‐Type Gate‐All‐Around InAs Nanowire Transistors. Advanced Functional Materials, 33(23). https://doi.org/10.1002/adfm.202214653

Li, Q., Yang, X., Quhe, R., & Lu, J. (2023). Super low contact resistance in monolayer MoS2 transistors. Science China Physics, Mechanics & Astronomy, 66(9), 297331. https://doi.org/10.1007/s11433-023-2146-0

Yin, G., Guo, Y., Ke, Y., Zhang, L., Zhang, J., & Quhe, R. (2023). Quantum transport simulations of a two-dimensional SnSe ferroelectric semiconductor junction. Physica E: Low-Dimensional Systems and Nanostructures, 154, 115814. https://doi.org/10.1016/j.physe.2023.115814

2022年

Liu, Y., Yin, G., An, W., Ke, Y., & Quhe, R. (2022). A computational study of electrical contacts to all-inorganic perovskite CsPbBr3. Nanotechnology, 33(47), 475701. https://doi.org/10.1088/1361-6528/ac8815

 Wu, B., Yang, J., Quhe, R., Liu, S., Yang, C., Li, Q., Ma, J., Peng, Y., Fang, S., Shi, J., Yang, J., Lu, J., & Du, H. (2022). Scaling Behavior of Magnetoresistance with the Layer Number in Magnetic Tunnel Junctions. Physical Review Applied, 17(3), 034030. https://doi.org/10.1103/PhysRevApplied.17.034030

2021年

Quhe, R., Xu, L., Liu, S., Yang, C., Wang, Y., Li, H., Yang, J., Li, Q., Shi, B., Li, Y., Pan, Y., Sun, X., Li, J., Weng, M., Zhang, H., Guo, Y., Xu, L., Tang, H., Dong, J., Lu, J. (2021). Sub-10 nm two-dimensional transistors: Theory and experiment. Physics Reports, 938, 1–72. https://doi.org/10.1016/j.physrep.2021.07.006

Ma, J., Quhe, R., Zhang, Z., Yang, C., Zhang, X., Li, J., Xu, L., Yang, J., Shi, B., Liu, S., Xu, L., Sun, X., & Lu, J. (2021). Two-dimensional materials as a stabilized interphase for the solid-state electrolyte Li 10 GeP 2 S 12 in lithium metal batteries. Journal of Materials Chemistry A, 9(8), 4810–4821. https://doi.org/10.1039/D0TA07589B

Wang, P., Han, S., & Quhe, R.. Quantum transport simulation of the two-dimensional GaSb transistors. Journal of Semiconductors, 2021, 42(12), 7. https://doi.org/10.1088/1674-4926/42/12/122001

2020年

Liu, D., Liu, K., & Quhe, R. (2020). Quantum transport simulations of a monolayer all-inorganic perovskite transistor. Journal of Physics D: Applied Physics, 53(45). https://doi.org/10.1088/1361-6463/aba789

Liu, K., Zeng, W., Liu, D., & Quhe, R. Poisson’s ratio in the all-inorganic perovskite monolayers. Modern Physics Letters B, 2020, 34, 2150002. https://doi.org/10.1142/S0217984921500020

2019年

Liu, B., Niu, M., Fu, J., Xi, Z., Lei, M., & Quhe, R. (2019). Negative Poisson’s ratio in puckered two-dimensional materials. Physical Review Materials, 3(5), 054002. https://doi.org/10.1103/PhysRevMaterials.3.054002

Quhe, R., Liu, J., Wu, J., Yang, J., Wang, Y., Li, Q., Li, T., Guo, Y., Yang, J., Peng, H., Lei, M., & Lu, J. (2019). High-performance sub-10 nm monolayer Bi2O2Se transistors. Nanoscale, 11(2), 532–540. https://doi.org/10.1039/c8nr08852g

Quhe, R., Chen, J., & Lu, J. (2019). A sub-10 nm monolayer ReS2 transistor for low-power applications. Journal of Materials Chemistry C, 7(6), 1604–1611. https://doi.org/10.1039/C8TC05863F

Ma, J., Fu, J., Niu, M., & Quhe, R. (2019). MoO2 and graphene heterostructure as promising flexible anodes for lithium-ion batteries. Carbon, 147, 357–363. https://doi.org/10.1016/j.carbon.2019.03.006

Zhang, Q., Wei, J., Liu, J., Wang, Z., Lei, M., & Quhe, R. 2D/2D Electrical Contacts in the Monolayer WSe2 Transistors: A First-Principles Study. ACS Applied Nano Materials, 2019, 2(5), 2796–2805. https://doi.org/10.1021/acsanm.9b00290

Yan, J., Pang, H., Xu, L., Yang, J., Quhe, R., Zhang, X., Pan, Y., Shi, B., Liu, S., Xu, L., Yang, J., Pan, F., Zhang, Z., & Lu, J. (2019). Excellent Device Performance of Sub-5-nm Monolayer Tellurene Transistors. Advanced Electronic Materials, 5(7). https://doi.org/10.1002/aelm.201900226

Zhang, H., Xiong, J., Ye, M., Li, J., Zhang, X., Quhe, R., Song, Z., Yang, J., Zhang, Q., Shi, B., Yan, J., Guo, W., Robertson, J., Wang, Y., Pan, F., & Lu, J. (2019). Interfacial Properties of Monolayer Antimonene Devices. Physical Review Applied, 11(6). https://doi.org/10.1103/PhysRevApplied.11.064001

2018年

Li, Q., Yang, J., Quhe, R., Zhang, Q., Xu, L., Pan, Y., Lei, M., & Lu, J. (2018). Ohmic contacts between monolayer WSe2 and two-dimensional titanium carbides. Carbon, 135, 125–133. https://doi.org/10.1016/j.carbon.2018.04.043

Quhe, R., Li, Q., Zhang, Q., Wang, Y., Zhang, H., Li, J., Zhang, X., Chen, D., Liu, K., Ye, Y., Dai, L., Pan, F., Lei, M., & Lu, J. (2018). Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors. Physical Review Applied, 10(2), 024022. https://doi.org/10.1103/PhysRevApplied.10.024022

2017年

Quhe, R., Peng, X., Pan, Y., Ye, M., Wang, Y., Zhang, H., Feng, S., Zhang, Q., Shi, J., Yang, J., Yu, D., Lei, M., & Lu, J. (2017). Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough? ACS Applied Materials & Interfaces, 9(4), 3959–3966. https://doi.org/10.1021/acsami.6b14699

Quhe, R., Wang, Y., Ye, M., Zhang, Q., Yang, J., Lu, P., Lei, M., & Lu, J. (2017). Black phosphorus transistors with van der Waals-type electrical contacts. Nanoscale, 9(37), 14047–14057. https://doi.org/10.1039/C7NR03941G

2016年以前

Quhe, R., Nava, M., Tiwary, P., & Parrinello, M. (2015). Path integral metadynamics. Journal of Chemical Theory and Computation, 11(4), 1383–1388. https://doi.org/10.1021/ct501002a

Nava, M., Quhe, R., Palazzesi, F., Tiwary, P., & Parrinello, M. (2015). de Broglie Swapping Metadynamics for Quantum and Classical Sampling. Journal of Chemical Theory and Computation, 11(11), 5114–5119. https://doi.org/10.1021/acs.jctc.5b00818

Zhong, H., Quhe, R., Wang, Y., Ni, Z., Ye, M., Song, Z., Pan, Y., Yang, J., Yang, L., Lei, M., Shi, J., Lu, J., Wang, Y., Ye, M., Song, Z., Pan, Y., Quhe, R., Yang, J., Yang, L., Lu, J. (2016). Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations. Scientific Reports, 6, 21786. https://doi.org/10.1038/srep21786

Quhe, R., Fei, R., Liu, Q., Zheng, J., Li, H., Xu, C., Ni, Z., Wang, Y., Yu, D., Gao, Z., & Lu, J. (2012). Tunable and sizable band gap in silicene by surface adsorption. Scientific Reports, 2(1), 853. https://doi.org/10.1038/srep00853

Quhe, R., Zheng, J., Luo, G., Liu, Q., Qin, R., Zhou, J., Yu, D., Nagase, S., Mei, W.-N. N., Gao, Z., & Lu, J. (2012). Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride. NPG Asia Materials, 4(2), e16. https://doi.org/10.1038/am.2012.10