所属单位：北京邮电大学

教研室：科研楼334

发表刊物：Asia Communications and Photonics Conference 2014

摘要：The epitaxial growth of GaAs on patterned Si(001) substrates by MOCVD is presented.Effect of growth temperature and V/III ratio on coalescence is investigated. Meanwhile, changing total pressure can reduce the polycrystals generated on mask.

论文类型：论文集

学科门类：工学

一级学科：电子科学与技术*

文献类型：C

是否译文：否

收录刊物：EI