论文成果
The Effect of InGaAs/GaAs Superlattices on GaAs Epilayer Grown on Si (100) Substrate
发布时间：2024-05-07 点击次数：
所属单位：北京邮电大学
教研室：科研楼334
发表刊物：Asia Communications and Photonics Conference 2013
摘要：High-quality GaAs epilayers on Si substrates have been obtained by insertion of InGaAs/GaAs superlattices combined with thermal cycle annealing. The crystallinity of GaAs epilayer has been investigated by DCXRD, AFM and TEM.
论文类型：论文集
学科门类：工学
一级学科：电子科学与技术*
文献类型：C
是否译文：否
收录刊物：EI