Li Gong, Xin Yan*, Xia Zhang, Yi Li, Chaofei Zha, and Xiaomin Ren Electronic structures and optical properties of sulfur-passivated InAs nanowires by first-principles study. Physica B 625, 413541 (2022)
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Included Journals:SCI
Pre One:Wei Luo, Chaofei Zha, Xia Zhang, Xin Yan, and Xiaomin Ren. Synaptic devices based on gate-all-around InAs nanowire field effect transistor. Journal of Physics: Conference Series 2370, 012015 (2022)
Next One:Xueguang Yuan, Jingya Chen, Jiali Wu, Xin Yan*, Yangan Zhang, and Xia Zhang. Graphene-based tunable linear and linear-to-circular polarization converters in the THz band. Results in Physics 37, 105571 (2022)
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