Wei Luo, Chaofei Zha, Xia Zhang, Xin Yan, and Xiaomin Ren. Synaptic devices based on gate-all-around InAs nanowire field effect transistor. Journal of Physics: Conference Series 2370, 012015 (2022)
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Included Journals:SCI
Pre One:Xin Yan*, Yuqing Liu, Chaofei Zha, Xia Zhang, Yunyan Zhang, and Xiaomin Ren. Non-<111>-oriented semiconductor nanowires: growth, properties, and applications. Nanoscale 15, 3032-3050 (2023). 【Selected for 2023 Nanoscale Emerging Investigators collection】
Next One:Li Gong, Xin Yan*, Xia Zhang, Yi Li, Chaofei Zha, and Xiaomin Ren Electronic structures and optical properties of sulfur-passivated InAs nanowires by first-principles study. Physica B 625, 413541 (2022)
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